As a market share leader in RTP, Mattson Technology is recognized
as a provider of the industry’s most advanced RTP technology.
Leading device manufacturers are employing the Company’s
RTP equipment in high-volume production of <65 nm technology
devices, boosting the limits of lamp-based rapid thermal processing.
Mattson’s proprietary dual-side lamp-based wafer heating
technology, contact-less edge-guard ring and unique emissivity-compensated
temperature controller guarantee superior results on the wafer
with unparalleled repeatability and temperature uniformity
across the wafer. By providing our customers’ processes
improved wafer uniformity, reduced pattern shift and reduced
thermal stress, Mattson’s RTP systems offer the lowest
total cost of ownership (TCO).
Mattson’s RTP systems achieve first-rate process results
on a wide range of RTP applications, including:
• S/D Anneal
• Silicide Formation
• Oxidation: Dry, Wet and Selective
• Ultra-Shallow Junction Formation (USJF)
• Millisecond Anneal (MSA)
Mattson is collaborating with Varian Semiconductor to develop
transistor formation technologies for 65 nm and smaller device
structures. The initial efforts of this development work will
be focused on ultra-shallow junction formation and will be
followed by additional activities aimed at furthering the
integration of front-end-of-line transistor fabrication processing.
We plan to continue our efforts in developing innovative
RTP tools and bringing optimized, deep-submicron integrated
transistor formation processes to the marketplace
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