RTP Technical Publications
Extendible Process Using UV-Enhanced Gate Dielectric
In
Situ Real-Time Studies of Nickel Silicide Phase Formation
Low-Temperature RTP for Source/Drain Engineering
Physical
Characterization of ZrO2 Films On Silicon After Rapid Thermal
Anneal
Rapid Thermal
Solid Phase Epitaxy Annealing for Ultra-Shallow Junction
Formation
RTP Applications and Technology Options for the Sub-45 nm
Nodes
RTP-Grown Oxynitride Layers Meet Gate Challenges
Selective Oxidation of Advanced Gate Stacks with Tungsten Electrode
Selective Oxidation
of Tungsten-Gate Stacks In High Volume DRAM Production Thermal Budget Reduction Drives RTP Beyond the 45 nm Node
USJ Formation: Annealing Beyond 90 nm
UV-Enhanced Oxynitridation of Silicon Substrates
|