Mattson’s proprietary dual-side lamp-based wafer heating technology, contact-less edge-guard ring and unique emissivity-compensated temperature controller guarantee superior results on the wafer with unparalleled repeatability and temperature uniformity across the wafer. By providing our customers’ processes improved wafer uniformity, reduced pattern shift and reduced thermal stress, Mattson’s RTP systems offer the lowest total cost of ownership (TCO).
Mattson’s RTP systems are enhanced with innovations in temperature measurement and control. These new temperature controllers provide our customers with the ability to extend their current technology to future device generations. Innovations in temperature control enable extended processing temperatures and perfect temperature profiles without over- or under-shoots.
Mattson’s RTP systems achieve first-rate process results on a wide range of RTP applications, including:
· S/D Anneal
· Silicide Formation
· Oxidation: Dry, Wet and Selective
· Ultra-Shallow Junction Formation (USJF)
· Millisecond Anneal (MSA)
Mattson is collaborating with Varian Semiconductor to develop transistor formation technologies for 65 nm and smaller device structures. The initial efforts of this development work will be focused on ultra-shallow junction formation and will be followed by additional activities aimed at furthering the integration of front-end-of-line transistor fabrication processing.
We plan to continue our efforts in developing innovative RTP tools and bringing optimized, deep-submicron integrated transistor formation processes to the marketplace.
|
