MATTSON TECHNOLOGY STRENGTHENS RTP MARKET LEADERSHIP WITH INTRODUCTION OF NEW HELIOS SYSTEM

Production-Proven Helios Addresses Deep Submicron Manufacturing Requirements

FREMONT, Calif.- July 12, 2004 - Mattson Technology, Inc. (NASDAQ: MTSN), a leading supplier of advanced process equipment used to manufacture semiconductors, today introduced the Helios, an advanced dual-chamber 300 mm rapid thermal processing (RTP) system designed to meet the stringent processing requirements for high-volume chip manufacturing through the 65 nanometer (nm) technology node. This innovative system delivers excellent productivity and cost of ownership and allows chipmakers to address the most demanding 300 mm RTP applications, including ultra-shallow junction (USJ) and nickel silicide (NiSi) formation.

“The Helios system will enable Mattson Technology to extend its RTP leadership for advanced chip manufacturing at the 65 nanometer node and beyond,” said Robert B. MacKnight, chief operating officer for Mattson Technology. “The introduction of this second-generation 300 mm RTP tool—along with the flash millisecond annealing RTP technology that will be added through the planned acquisition of Vortek Industries—will allow Mattson to continue to deliver to our customers a full RTP process portfolio through the next several device generations.”

As design rules shrink below 65 nm and the industry moves to extremely short anneal cycles in advanced devices, precision thermal control becomes critical. USJ formation, a critical process in the fabrication of high-performance CMOS devices, requires accurately defined spike anneals that limit high-temperature exposure of the wafer to fractions of a second.

To enable these critical applications and new device designs, the Helios features significant advancements in temperature control, high-temperature ramp rates and low-temperature metal processing, for exceptional within-wafer uniformity and wafer-to-wafer repeatability.

“Temperature control is the essence of RTP,” said Dr. Juergen H. Biangardi, vice president and co-general manager of the Thermal Products Group for Mattson Technology. “The Helios’ model-based temperature control system delivers the precise and dynamic process control and manufacturing capability required for ultra-shallow junction formation. The system offers excellent temperature uniformity across the entire range of wafer backside emissivities, especially important to customers manufacturing multiple types of devices. The Helios’ unique control capabilities also enable low-temperature processing for advanced cobalt and multi-step nickel silicide processes.”

Enhanced temperature uniformity across the wafer can improve yield by permitting better control of device parameters, as well as gate oxide thickness and uniformity at sub-angstrom levels. The Helios features a state-of-the-art model-based temperature measurement and control system that provides the exceptional uniformity, repeatability and reliability required for achieving superior device performance. The system’s outstanding spike anneal performance, with rapid ramp and cool-down rates, provides the precise process control required for ultra-shallow junction formation. The Helios’ low-temperature processing capabilities enable steady-state operation at temperatures down to 250°C, providing greater temperature uniformity for next-generation NiSi formation. The Helios supports the full array of RTP applications, providing excellent results on the wafer surface for the most advanced annealing processes.

"Our goal at Mattson is to develop and deliver technologies and tools that provide higher productivity and lower operating costs in our customers' production fab environments," said Andreas B. Toennis, vice president and co-general manager of the Thermal Products Group for Mattson Technology. “The Helios was designed to address both the technical and economic challenges associated with 300 mm and the most advanced device production requirements. The Helios’ excellent thermal processing performance and dynamic temperature control, high productivity and small footprint offer significant cost-of-ownership advantages and make it the ideal solution for chipmakers seeking a robust, cost-effective RTP system to address applications for 90 nm and 65 nm device development and production. Mattson has already sold, shipped and achieved production acceptance for the Helios system at leading logic and memory manufacturers in Europe, Japan, Korea Taiwan and the U.S.”

The system’s modular, dual-chamber platform is designed for ease of use and maintenance and high reliability, critical factors in 300 mm volume production environments. Based on Mattson’s production-proven RTP technology, the Helios incorporates several proprietary design features, including dual-side wafer heating, which reduces pattern-related temperature effects, a unique model-based temperature control system insuring within wafer and wafer-to-wafer uniformity and repeatability and a transport mechanism that delivers throughput rates in excess of 120 wafers per hour.

According to Gartner Dataquest, an independent market research firm, the RTP market size for 2003 was $310.0 million and is expected to grow to $551 million in 2004. Mattson Technology is the second largest supplier of RTP systems in the world.

About Mattson Technology, Inc.

Mattson Technology, Inc. is a leading supplier of semiconductor wafer processing equipment used in the fabrication of integrated circuits. The company’s dry strip and RTP equipment utilize innovative technology to deliver advanced processing capabilities on high-productivity platforms for the fabrication of current- and next-generation devices. Since beginning operations in 1989, the company’s core vision has been to help bring technology leadership and productivity gains to semiconductor manufacturers worldwide. For more information, please contact Mattson Technology, Inc., 47131 Bayside Parkway, Fremont, Calif. 94538. Telephone: (800) MATTSON/(510) 657-5900. Fax: (510) 492-5911. Internet: www.mattson.com.