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Mattson Technology’s new Helios™ 300 mm RTP system features
an advanced model-based temperature control that provides
exceptional uniformity, repeatability and reliability.
The system’s
outstanding spike anneal performance, with rapid ramp and
cool-down rates, provides the precise process
control required for ultra-shallow junction formation. The
Helios’ low-temperature control capability enables
processing at steady-state temperatures down
to 250°C and provides superior temperature uniformity
across the wafer, outperfoming next-generation
NiSi formation requirements.
Built on a modular, dual-chamber platform designed for ease
of maintenance and high reliability, the Helios includes
a dual-arm robot for increased throughput (over 120 wafers
per hour). The system
also features a contactless guard ring that entirely surrounds
the wafer to eliminate edge effects, thus providing 0 slip
line generation during processing.
The Helios’ excellent thermal
processing performance and temperature control, high productivity
and small footprint
offer significant Cost of Ownership advantages, making
it the ideal solution for chipmakers seeking a robust, cost-effective
RTP system to address the most demanding processing applications
for 90 nm and 65 nm device development and production.
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